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Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy
1, Afonenko A. A.
1, 1, 2, 2, 2, 3,4, 3,4
1Belarusian State University, Minsk, Republic of Belarus
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
3Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia
4Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudnyi, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
3Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia
4Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudnyi, Russia
Email: afonenko@bsu.by
The transmission electron microscopy (TEM) image of a quantum cascade heterostructure was analyzed. A heterostructure containing 185 periods and four quantum wells GaAs/Al0.15Ga0.85As in each period was grown by MOVPE. Different composition spreading laws (normal, exponential and asymmetric exponential) have been used to reveal the differences in the composition deviation at the interface "barrier/quantum well" and "quantum well/barrier" when interpolating the experimental hetero-interface profile. The effect of finite sample thickness on the composition fluctuation characteristics has been theoretically investigated and spectra and autocorrelation functions of composition fluctuations have been obtained. Estimates of the thickness of hetero-interface roughness and its correlation length have been carried out. Keywords: quantum cascade laser, transmission electron microscopy, hetero-interface, GaAs, AlGaAs.
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