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Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters
Zhidyaev K. S.
1, Chigineva A. B.
1, Baidus N. V.
1, Samartsev I. V.
1, Kudrin A. V.
1
1Lobachevsky State University, Nizhny Novgorod, Russia
Email: zhidyaev@nifti.unn.ru, chigineva@nifti.unn.ru, bnv@nifti.unn.ru, samartsev@nifti.unn.ru, kudrin@nifti.unn.ru
A GaAs thyristor with mesa-strip has been fabricated and experimentally studied. It is shown that changing topology of the heavily doped p-emitter and the anode ohmic contact leads to an increase in magnitude and decrease in variation of breakover voltage of the samples, as well as to a decrease in off-state current. Keywords: Thyristors, Mesastructure, Gallium arsenide, Breakover voltage, Off-state current.
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