Effect of design and growth conditions of metamorphic In(Ga,Al)As/GaAs heterostructures on electrical properties of In0.75Ga0.25As/InAlAs two-dimensional channel
Chernov M. Yu. 1, Solov’ev V. A. 1, Drichko I. L. 1, Smirnov I. Yu.1, Ivanov S. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: chernov@beam.ioffe.ru
Undoped metamorphic structures with In0.75Ga0.25As quantum well and various design of (In,Al)As barriers were grown on GaAs substrates by molecular beam epitaxy. Electrical properties of such structures were studied by using a 4-point Van der Pauw method and contactless technique based on the analysis of propagation of surface acoustic waves along the interface of the piezoelectric LiNbO3 and the sample. Increasing the thickness of the bottom barrier layer of the In0.75Ga0.25As quantum well as well as optimizing the growth temperature and As4/III ratio allowed achieving concentration and mobility of 2D carriers in 30 nm-thick In0.75Ga0.25As QW of below 3.4·1011 cm-2 and above 2·10^5 cm^2/(V·s), respectively, at T=1.7 K. Keywords: molecular beam epitaxy, metamorphic heterostructures, metamorphic buffer layer, two-dimensional electron channel, InGaAs/InAlAs.
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