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Defects with deep levels in high-voltage gradual p-i-n heterojunctions AlGaAsSb/GaAs
Sobolev M. M.
1, Soldatenkov F. Yu.
1
1Ioffe Institute, St. Petersburg, Russia
Email: m.sobolev@mail.ioffe.ru, f.soldatenkov@mail.ioffe.ru
High-voltage gradual p^0-i-n0 junctions of AlxGa1-xAs1-ySby with x~ 0.24 and y~ 0.05 in the i-region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX-center of the Si donor impurity, with a thermal activation energy E_t=414 meV, a capture cross section σ_n=1.04· 10-14 cm2, and a concentration N_d=2.4·1015 cm-3. In the heterostructures studied, there were no deep levels associated with dislocations. Keywords: AlGaAsSb, p^0-i-n0 junction, DLTS, DX-center, liquid phase epitaxy.
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