Application of the X-ray Reflectometry method for determination of composition gradients at the quantum well boundary in laser structures based on the AlGaAs/GaAs system
Berezutskiy A. V. 1, Mikayelyan G. T. 1, Tariverdiev S. D. 1
1LLC "Lassard", Obninsk, Kaluga region, Russia
Email: tekton1321@gmail.com
Devoted to the application of X-ray reflectometry to determine composition gradients at the boundaries of a quantum well in heterostructures based on AlGaAs/GaAs obtained by the MOCVD method. It is shown that the method is applicable at the stage of working out the active area. The parameters for recording reflectometric curves have been selected. The composition gradients in the experimental sample have been measured. Keywords: X-ray reflectometry, quantum well, heterojunction, transition layer, GaAs.
- L. Gottwaldt, K. Pierz, F.J. Ahlers, E.O. G.bel, S. Nau, T. Torunski, W. Stolz. J. Appl. Phys., 94 (4), 2464 (2003)
- I. Kojima, B. Li. Rigaku J., 16 (2), 31 (1999)
- K. Stoev, K. Sakurai. Rigaku J., 14 (2), 22 (1997)
- M.E. Vickers, M.J. Kappers, T.M. Smeeton, E.J. Thruch, J.S. Barnard, C.J. Humphreys. J. Appl. Phys., 94 (3), 1565 (2003)
- M.E. Vickers, J.L. Hollander, C. McAleese, M.J. Kappers, M.A. Moram, C.J. Humphreys. J. Appl. Phys., 111 (4), 43502 (2012)
- L.I. Goray, E.V. Pirogov, M.S. Sobolev, I. Ilkiv, A.S. Dashkov, Yu.A. Vainer, M.V. Svechnikov, P.A. Yunin, N. Chkhalo, A. Bouravlev. Semiconductors, 53 (14), 1910 (2019)
- E. Spiller. Rev. Phys., 23, 1687 (1988)
- V.P. Martovitsky. Avtoref. dokt. dis. (M., Lebedev Physical Institute, Russian Academy of Sciences, 2012). (in Russian)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.