Field p-channel transistors based on GaN/AlN/GaN heterostructures on a silicon substrate
Zhuravlev M. N.1, Egorkin V. I. 1
1National Research University of Electronic Technology, Zelenograd, Moscow, Russia
Email: maxim@org.miet.ru
Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate. Keywords: AlN/GaN heterostructure, two-dimensional hole gas, p-channel transistor, polarization.
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