Formation of InAs nanoislands on silicon surfaces and heterostructures based on them
Ilkiv I. V.1,2, Lendyashova V. V. 1,3, Borodin B. B. 3, Talalaev V. G. 4, Shugabaev T. 1, Reznik R. R.2, Cirlin G. E. 1,5,2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Martin Luther University Halle-Wittenberg, Halle, Germany
5 ITMO University, St. Petersburg, Russia
Email: fiskerr@ymail.com
Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed. Keywords: Quantum dots, molecular beam epitaxy, semiconductors, silicon, heterostructures.
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