Spatial electroluminescence distribution and internal quantum efficiency in substrate free InAsSbP/InAsSb double heterostructure
Matveev B.A.
1, Ratushnyi V.I.2, Rybal’chenko A. Yu. 2
1Ioffe Institute, St. Petersburg, Russia
2Volgodonsk Engineering and Technical Institute --- branch of the National Research Nuclear University MEPhI, Volgodonsk, Russia
Email: bmat@iropt3.ioffe.ru, payalnik07@yandex.ru
In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ=4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined. Keywords: AIIIBV narrow gap heterostructures, mid-IR LEDs, current crowding in LEDs, InAsSb based LEDs, internal quantum efficiency in InAsSb based LEDs.
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