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Photoluminescence of arsenic doped epitaxial films of Cd0.3Hg0.7Te
Ruzhevich M. S.1, Firsov D. D.
2, Komkov O. S.
2, Mynbaev K. D.
1,3, Varavin V. S.
4, Yakushev M. V.
4
1ITMO University, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: max.ruzhevich@niuitmo.ru, d.d.firsov@gmail.com, okomkov@yahoo.com, mynkad@mail.ioffe.ru, varavin@isp.nsc.ru, yakushev@isp.nsc.ru
The results of photoluminescence (PL) study of As-doped Cd0.3Hg0.7Te solid solutions films grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which shallow acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed. Keywords: CdHgTe, doping, acceptor impurity, photoluminescence.
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