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Metal assisted chemical etching of silicon and solution synthesis of Cu2O/Si radial nanowire array heterojunctions
Russian version
DOI: 10.21883/SC.2023.02.55956.3390
Chetibi L.1, Hamana D.1, Achour S.1
1Laboratory of Advanced Materials Technology, Ecole Nationale Polytechnique de Constantine and Phases transformations Laboratory, University of Constantine, Algeria
Email: d_hamana@yahoo.fr
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Cu2O/Si radial nanowire (NWs) array heterojunctions were prepared by depositing Cu2O nanoparticles via chemical bath deposition on n-Si nanowire arrays that were fabricated by metal-assisted electroless etching. After 20 cycles of deposition, large numbers of Cu2O nanoparticles with form shells that wrap the upper segment of each Si nanowire. This method of etching offers exceptional simplicity, flexibility, environmental friendliness, and scalability for the fabrication of three-dimensional silicon nanostructures with considerable depths, because of replacement of harsh oxidants such as H2O2 and AgNO3. Keywords: Cu2O/Si NWs heterojunctions, Cu2O nanoparticles, metal-assisted electroless etching.
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