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On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)
Russian version
DOI: 10.21883/SC.2023.01.55619.4338
Zakgeim A. L. 1, Karandashev S. A. 2, Klimov A. A. 2, Kunkov R. E. 2, Lukhmyrina T. S. 2, Matveev B. A. 2, Remennyi M. A. 2, Usikova A. A. 2, Chernyakov A. E. 1
1Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: zakgeim@mail.ioffe.ru, ksa08@yandex.ru, a.klimov@mail.ioffe.ru, romunkov@yandex.ru, t.lukhmyrina@ioffe.mail.ru, bmat@iropt3.ioffe.ru, Mremennyy@mail.ioffe.ru, usikova@mail.ioffe.ru, chernyakov.anton@yandex.ru
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Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/ n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1x3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics. Keywords: IR LED, IR diode array, Joule heating, Auger recombination, electron-phonon interaction.
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