Front contact to the GaSb-photovoltaic converter: Properties and thermal stability
Sorokina S.V.
1, . Soldatenkov F. Yu.
1, Potapovich N. S.
1, Khvostikov V.P.
11Ioffe Institute, St. Petersburg, Russia
Email: svsorokina@mail.ioffe.ru, f.soldatenkov@mail.ioffe.ru, nspotapovich@mail.ioffe.ru, vlkhv@scell.ioffe.rssi.ru
Issues related to the thermal stability of front contacts, based on Cr-Au and Cr-Au-Ag-Au, to GaSb-based photovoltaic cells have been considered at the operational (the cell temperature is 50oC) and standard conditions as well as at the forced thermal degradation (at 125 and 200oC). It is shown that the photovoltaic converter with the silver-containing contact is preferable in terms of the stability of contact resistivity, external quantum yield, FF, Voc, and therefore, the cell efficiency and service life. The durability of the cells is determined at operational and elevated temperatures. Keywords: contact, degradation, photovoltaic converter, GaSb.
- National standard of the Russian Federation "Photovoltaic modules made of silicon ground. Test methods", GOST R 56980-2016 (IEC 61215:2005) IEC 61215. Crystalline silicon terrestrial photovoltaic (PV) modules --- Design qualification and type approval: International Electro technical commission, 2005
- National standard of the Russian Federation "Photovoltaic devices with concentrators. Test methods", GOST R 56983-2016 (IEC 62108:2007) IEC 62108. Concentrator photovoltaic (CPV) modules and assembles --- Design qualification and type approval, 2007
- A. Vogt, G. Peharz, J. Jaus, A. Bosch, A.W. Bett. Proc. 21st Eur. Photovoltaic Solar Energy Conf. (Dresden, Germany, 2006) p. 2225
- V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, F.Yu. Soldatenkov, N.Kh. Timoshina. Semiconductors, 48 (9), 1248 (2014). DOI: 10.1134/S1063782614090115
- Y. Kemmoku, T. Egami, M. Hiramatsu, Y. Miyazaki, K. Araki, N.J. Ekins-Daukes, T. Sakakibara. Proc. 19th EU PVSEC (Paris, France, 2004)
- K. Araki, H. Uozumi, M. Yamaguchi. Proc. 29th IEEE Photovoltaic Specialists Conf. (New Orleans, LA, USA, 2002) p. 1568. DOI: 10.1109/PVSC.2002.1190913
- J. Jaus, G. Peharz, A. Gombert, J. Rodriguez, F. Dimroth, F. Eltermann, O. Wolf, M. Passig, G. Siefer, A. Hakenjos, S.V. Riesen, A.W. Bett. Proc. 34th IEEE. Photovoltaic Specialists Conf. (Philadelphia, Pennsylvania, USA, 2009) p. 001931
- Ya. Ota, H. Nagai, K. Araki, K. Nishioka. Proc. 8th Int. Conf. on Concentrating Photovoltaic Systems ( CPV-8) (Toledo, Spain, 2012)
- O.I. Chosta, V.A. Grilikhes, A.A. Soluyanov, M.Z. Shvarts. Proc. 20th Eur. Photovoltaic Solar Energy Conf. (Barcelona, Spain, 2005) p. 519
- V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, O.A. Khvostikova, A.V. Malievskaya, A.S. Vlasov, M.Z. Shvarts, N.K. Timoshina, V.M. Andreev. Semiconductors, 44 (2), 255 (2010). DOI: 10.1134/S1063782610020223
- A.S. Vlasov, V.P. Khvostikov, S.V. Sorokina, N.S. Potapovich, V.S. Kalinovskiy, E.P. Rakova, V.M. Andreev, A.V. Bobyl; G.F. Tereschenko. Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells. Semiconductors, 44 (9), 1244 (2010). DOI: 10.1134/S1063782610090241 http://journals.ioffe.ru/articles/7233
- Z. Utlu. Int. J. Low-Carbon Technologies, 15 (2), 277 (2020). https://doi.org/10.1093/ijlct/ctz049
- B. Tadayon, C.S. Kyono, M. Fatemi, S. Tadayon, J.A. Mittereder. J. Vac. Sci. Technol. B, 13 (1), 1 (1995). DOI: 10.1116/1.587979
- J.B. Oliveira, C.A. Olivieri, J.C. Galzerani, A.A. Pasa, F.C. de Prince. J. Appl. Phys., 66 (11), 5484 (1989). DOI: 10.1063/1.343699
- A.G. Milnes, M. Ye, M. Stam. Solid State Electron., 37 (1), 37 (1994). DOI: 10.1016/0038-1101(94)90101-5
- V.M. Andreev, S.V. Sorokina, N.Kh. Timoshina, V.P. Khvostikov, M.Z. Shvarts. Semiconductors, 43 (5) 668 (2009). DOI: 10.1134/S1063782609050236
- V.M. Andreev, V.P. Khvostikov, V.D. Rumyantsev, S.V. Sorokina, V.I. Vasil'ev. Proc. 4th NREL Conf. on Thermophotovoltaic Generation of Electricity (Denver, CO, 1998) p. 384. DOI: 10.1063/1.57818
- F.Y. Soldatenkov, S.V. Sorokina, N.Kh. Timoshina, V.P. Khvostikov, Y.M. Zadiranov, M.G. Rastegaeva, A.A. Usikova. Semiconductors, 45 (9), 1219 (2011). DOI: 10.1134/S1063782611090193
- I.M. Vikulin, V.I. Irkha, B.V. Korobitsyn, V.E. Gorbachev. TKEA, 2, 55 (2004)
- M.I. Chernykh, G.A. Veligura, V.A. Buslov, V.A. Kozhevnikov, A.N. Tsotsorin. Elektron. tekhn., ser. 2. Poluprovodnikovyye pribory, 3 (234), 35 (2014) (in Russian). https://www.niiet.ru/wp-content/uploads/pub13.pdf
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.