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Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers
Russian version
DOI: 10.21883/SC.2023.01.55616.3554
Pashkovskii A.B.1, Bogdanov S.A.1, Bakarov A. K. 2, Zhuravlev R.S. 2, Lapin V.G.1, Lukashin V.M. 1, Karpov S.N.1, Rogachev I.A. 1, Tereshkin E.V.1
1JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: solidstate10@mail.ru
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The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping of AlGaAs barriers and additional digital potential barriers of short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For the studied heterostructures, the introduction of digital barriers significantly, by 30-40%, increases the electrons drift velocity overshot when they enter the region of a strong field. The effect of localization of hot electrons on the states in AlAs/GaAs superlattices along the edges of the InGaAs quantum well is revealed. It is shown that taking this effect into account significantly increases the electrons drift velocity overshot, bringing it closer to the maximum theoretical limit for the model used - the drift velocity overshot in the undoped InGaAs bulk material. Keywords: potential barriers, digital barriers, heterostructures, electrons drift velocity overshot.
  1. H. Wang, F. Wang, S. Li, T.Y. Huang, A.S. Ahmed, N.S. Mannem, J. Lee, E. Garay, D. Munzer, C. Snyder, S. Lee, H.T. Nguyen, M.E.D. Smith. (Jul. 2019). Power Amplifiers Performance Survey 2000-Present. [Online]. Available: https://gems.ece.gatech.edu/PA_survey.html
  2. B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra. IEEE Trans. Electron Dev., 65 (1), 45(2018)
  3. N.S. Dasgupta, S. Keller, J.S. Speck, U.K. Mishra. IEEE Electron Dev. Lett., 32 (12), 1683 (2011)
  4. Y. Tang, K. Shinohara, D. Regan, A. Corrion, D. Brown, J. Wong, A. Schmitz, H. Fung, S. Kim, M. Micovic. IEEE Electron Dev. Lett., 36 (6), 549 (2015)
  5. B.E. Foutz, S.K. O'Leary, M.S. Shur, L.F. Eastman. J. Appl. Phys., 85 (11), 7727 (1999). DOI: 10.1063/1.370577
  6. S.A. Bogdanov, A.A. Borisov, S.N. Karpov, M.V. Kuliyev, A.B. Pashkovsky, E.V. Tereshkin. Tech. Phys. Lett., 48 (2), 44 (2022)
  7. I.S. Vasilevsky, A.N. Vinichenko, N.I. Kargin. Tez. dokl. 8-y Mezhdunar. nauch.-prakt. konf. po fizike i tekhnologii nanogeterostrukturnoi SVCh-elektroniki. (Mokerovskie Chteniya, May 24, Moscow) p. 28. (in Russian)
  8. D.S. Ponomarev, I.S. Vasilevsky, G.B. Galiev, E.A. Klimov, R.A. Khabibullin, V.A. Kulbachinsky, N.A. Yuzeeva. FTP, 46 (4), 500 (2012). (in Russian)
  9. D.A. Safonov, A.N. Vinichenko, N.I. Kargin, I.S. Vasilevsky. Tech. Phys. Lett., 44 (4), 34 (2018)
  10. K. Inoue, H. Sakaki, J. Yoshino, Y. Yoshioka. Appl. Phys. Lett., 46, 9735 (1985)
  11. K.-J. Friedland, R. Hey, H. Kostial, R. Klann, K. Ploog. Phys. Rev. Lett., 77, 4616 (1996)
  12. A.N. Vinichenko, V.P. Gladkov, N.I. Kargin, M.N. Strikhanov, I.S. Vasilevsky. FTP, 48 (12), 1660 (2014)
  13. K.S. Zhuravlev, D.Yu. Protasov, D.V. Gulyaev, A.K. Bakarov, A.I. Toropov, V.G. Lapin, V.M. Lukashin, A.B. Pashkovski. Adv. Microelectron.: Rev., v. 2 (Barcelona, Spain: IFSA, 251 (2019)
  14. V.M. Lukashin, A.B. Pashkovsky, K.S. Zhuravlev, A.I. Toropov, V.G. Lapin, A.B. Sokolov. Tech. Phys. Lett., 38 (17), 84 (2012)
  15. A.B. Pashkovsky, A.S. Bogdanov, V.M. Lukashin, S.I. Novikov. Mikroelektronika, 49 (3), 210 (2020) (in Russian)
  16. T. Baba, T. Mizutani, M. Ogawa. Jpn. J. Appl Phys., 22, L627e9 (1983)
  17. T. Sajoto, M. Santos, J.J. Heremans, M. Shayegan, M. Heiblum, M.V. Weckwerth, U. Meirav. Appl. Phys. Lett., 54, 840 (1989)
  18. A.B. Pashkovskii, S.A. Bogdanov, A.K. Bakarov, A.B. Grigorenko, K. S. Zhuravlev, V.G. Lapin, V.M. Lukashin, I.A. Rogachev, E.V. Tereshkin, S.V. Shcherbakov. IEEE Trans. Electron Dev., 68 (1), 53 (2021)
  19. D.Yu. Protasov, D.V. Gulyaev, A.K. Bakarov, A.I. Toropov, E.V. Erofeev, K.S. Zhuravlev. Tech. Phys. Lett., 44 (6), 77 (2018)
  20. A.A. Borisov, K.S. Zhuravlev, S.S. Zyrin, V.G. Lapin, V.M. Lukashin, A.A. Makovetskaya, V.I. Novoselets, A.B. Pashkovsky, A.I. Toropov, N.D. Ursulyak, S.V. Shcherbakov. Tech. Phys. Lett., 42 (16), 41 (2016)
  21. M. Shur. Electron. Lett., 12 (23), 615 (1976)
  22. A.V. Garmatin. Elektron. tekhn., ser. 1. Elektronika SVCh., 3 (377), 66 (1985) (in Russian)
  23. D.Yu. Protasov, K.S. Zhuravlev. Solid-State Electron., 129, 66 (2017)
  24. A. Cappy, B. Carnez, R. Fauquembergues, G. Salmer, E. Constant. IEEE Trans. Electron Dev., 27 (11), 2158(1980)

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