Zhukov A. E.1, Nadtochiy A. M.1, Kryzhanovskaya N. V.1, Shernyakov Yu. M.2, Gordeev N. Yu.2, Serin A. A.2, Mintairov S. A.2, Kalyuzhnyy N. A.2, Payusov A. S.2, Kornyshov G. O.3, Maximov M. V.3, Wang Y.4
1High School of Economics, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
4Laser Institute, Shandong Academy of Sciences, Qingdao, China
Email: zhukale@gmail.com
The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design of the laser diode was determined to achieve the highest external differential efficiency. Keywords: diode lasers, semiconductor nanostructures, internal loss.
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