Zakirov E. R.1, Kesler V. G.1, Sidorov G. Yu.1, Gorshkov D. V.1, Kovchavtsev A. P.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: erzakirov@isp.nsc.ru
Capacitance-voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ~(1-6)·1011 cm-2. The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ~(4-8)·1011 cm-2·eV-1. The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma. Keywords: mercury cadmium telluride, film, surface states, plasma.
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