Regularities of behavior of temperature dependences of resistivity of crystals of solid solutions (Bi2-xSbx)Te3 (0<x<2)
Stepanov N.P.1,2, Ivanov M.S.3, Stepanova L.E.1,2, Vinogradova L.V.3
1Transbaikal State University, Chita, Russia
2Zabaikalsky Institute of Entrepreneurship --- SibUPK branch, Chita, Russia
3Trans-Baikal Institute of Railway Transport, Chita, Russia
Email: np-stepanov@mail.ru

PDF
It is shown that the change in the resistivity of crystals of solid solutions (Bi2-xSbx)Te3 (0<x<2) p-type in the temperature range preceding the onset of intrinsic conductivity is due not only to a change in the static relaxation time, the behavior of which in the temperature range from 80 to 300 K is determined mainly by carrier scattering on the vibrations of the crystal lattice, but also by changing the concentration of light holes. The latter is a consequence of the transition of charge carriers from the subzone of heavy holes to the subzone of light holes, as a result of which the concentration of light holes, which make the main contribution to electrical conductivity, decreases with increasing temperature. As a consequence, the plasmon energy proportional to the concentration of charge carriers also decreases with increasing temperature, and the energy of this transition, comparable to the plasmon energy, increases. In this regard, crystals (Bi2-xSbx)Te3 have a specific feature due to the convergence of the plasmon energy and the interband transition, which creates conditions for increasing the intensity of the electron-plasmon interaction. Keywords: thermoelectric materials, bismuth and antimony tellurides, resistivity, interband transitions, plasma of free charge carriers.
  1. B.M. Gol'tsman, V.A. Kudinov, I.A. Smirnov. Poluprovodnikovye termoelektricheskie materialy na osnove Bi2Te3 (M., Nauka, 1972) (in Russian)
  2. L.D. Ivanova, Yu.V. Granatkina. Inorg. Mater., 36 (7), 672 (2000)
  3. V.A. Kulbachinskii, V.G. Kytin, P.M. Tarasov, N.A. Yuzeeva. Phys. Solid State, 52 (9), 1830 (2010)
  4. G. Wang, T. Cagin. Phys. Rev. B, 76, 075201 (2007)
  5. V.A. Greanya, W.C. Tonjes, R. Liu, C.G. Olson, D.-Y. Chung, M.G. Kanatzidis. Phys. Rev. B, 62 (24), 16425-9 (2000)
  6. P. Larson, V.A. Greanya, W.C. Tonjes, R. Liu, S.D. Mahanti, C.G. Olson. Phys. Rev. B, 65, 085108-9 (2000)
  7. A.A. Kudryashov. Candidate's Dissertation in Mathematics and Physics: 01.04.09, Low Temperature Physics (M., Mosk. Gos. Univ., 2016) (in Russian)
  8. S.A. Nemov, N.M. Blagikh, L.D. Ivanova. Phys. Solid State, 56 (9), 1754 (2014)
  9. N.P. Stepanov, A.A. Kalashnikov, O.N. Uryupin. Semiconductors, 55 (7), 637 (2021)
  10. V.M. Grabov, A.S. Parakhin, L.S. Bagulin, O.N. Uryupin. Izv. RGPU im. A.I. Gertsena, 6 (15), 86 (2006) (in Russian)
  11. N.P. Stepanov, A.A. Kalashnikov. Opt. Spectrosc., 129, 700 (2021)
  12. P. Lostak, J. Navratil, J. Sramkova, J. Horak. Phys. Status Solidi A, 135, 519 (1993)
  13. P. Lostak, S. Karamazov, J. Horak. Phys. Status Solidi A, 143, 271 (1994)
  14. L.R. Testardi, J.N. Bierly, F.J. Danahoe. J. Phys. Chem. Sol., 23, 1209 (1962)
  15. C.H. Champness, A.L. Kipling. J. Phys. Chem. Sol., 27, 1409 (1966)
  16. J. Ziman. Electrons and Phonons: The Theory of Transport Phenomena in Solids (Clarendon, 1960)
  17. F.J. Blatt. Physics of Electronic Conduction in Solids (McGraw-Hill, 1968)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru