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Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots
Kornyshov G.O
1, Gordeev N.Yu.
2, Shernyakov Yu.M. 2, Beckman A.A. 2, Payusov A.S.
2, Mintairov S.A. 2, Kalyuzhnyy N.A. 2, Maximov M.V.
1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: supergrigoir@gmail.com, gordeev@switch.ioffe.ru, plusov@mail.ioffe.ru, maximov.mikh@gmail.com
A systematic study of a series of InGaAs/GaAs lasers in the 1-1.3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots. Keywords: semiconductor laser, quantum well, quantum dots, quantum well-dots, optical gain.
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