Influence of formation conditions of silicon diodes on their reverse currents
Bulyarskiy S. V. 1,2, Kitsyuk E. P.2, Lakalin A. V.1,2, Saurov M. A.2, Svetukhin V. V.2, Orlov A. P. 1, Rudakov G. A.1
1 Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia
2Research and Production Complex “Technological Center” MIET, Zelenograd, Moscow, Russia

In this work, a study was made of the influence of silicon diode manufacturing technology on the emergence of generation and recombination centers. The electrical characteristics of p-n junctions formed in different ways on n-type silicon substrates were compared: a) the p-type layer was created by the diffusion method; b) the p-type layer was formed by ion implantation into an epitaxial n-layer preliminarily grown on the substrate; c) two n- and p-type epitaxial layers were successively deposited on the substrate. It has been established that for diodes based on a double epitaxial layer, the direct and reverse current-voltage characteristics (CVC) are due to the diffusion mechanism, and the structures themselves have a low concentration of recombination centers. At the same time, in diodes based on the diffusion method and ion implantation, the CVCs are due to the generation-recombination mechanism. With reverse bias, electron-phonon processes play a significant role in the formation of the CVC, and with forward bias, carrier recombination in the region of the space charge of the p-n junction. The concentrations and energies of recombination centers have been determined. Keywords: forward and reverse current-voltage characteristic, p-n junction, diffusion, ion implantation, epitaxy, recombination centers, the Poole-Frenkel effect, electron-phonon interaction.
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