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Growth, crystal structure and temperature dependence of the band gap of Cu2ZnGeS4 single crystals
Russian version
DOI: 10.21883/SC.2022.05.53430.9801
Bodnar I. V. 1, Yashchuk V. A. 1, Pavlovskii V. N. 2, Yablonskii G. P. 2
1Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
2B.I.Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus
Email: chemzav@bsuir.by
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Cu2ZnGeS4 single crystals were grown by chemical vapor transport reaction method. Their composition and crystal structure were determined. It was shown that the obtained single crystals crystallize in a tetragonal structure. The band gap of the obtained single crystals was determined basing on transmission spectrum in the region of the absorption edge in temperature range of 10-320 K. It was found that band gap width increases with decreasing of temperature. Keywords: Bridgman method, single crystals, crystal structure, transmission spectrum, band gap.
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