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Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method
Russian version
DOI: 10.21883/SC.2022.10.54910.9961
Mokhov E. N. 1, Davydov V. Yu. 1, Smirnov A. N.1, Nagaluk S. S. 1
1Ioffe Institute, St. Petersburg, Russia
Email: Valery.Davydov@mail.ioffe.ru
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The possibility of growing hexagonal boron nitride (hBN) of high structural perfection on hexagonal silicon carbide (SiC) substrates using the physical vapor transport method is demonstrated. The results obtained indicate that this method is promising for the formation of large-area high-quality hBN/SiC heterostructures in the course of one technological process, which have a high potential for device applications. Keywords: hexagonal boron nitride, high-temperature sublimation from the gas phase, Raman spectroscopy, photoluminescence.
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