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Home » Semiconductors » Year 2022, issue 10 » Article p. 782
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Study of active regions based on multiperiod GaAsN/InAs superlattice
Russian version
DOI: 10.21883/SC.2022.10.54909.9951
Babichev A. V. 1, Pirogov E.V.2, Sobolev M. S.2, Denisov D.V.2, Fominykh H.A.2,3, Baranov A. I.2, Gudovskikh A.S.2, Melnichenko I. A.2,3, Yunin P. A.4, Nevedomsky V. N.5, Tokarev M. V.5, Ber B.Ya.5, Gladyshev A. G.1, Karachinsky L. Ya. 1, Novikov I. I. 1, Egorov A. Yu. 2
1 ITMO University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3High School of Economics, St. Petersburg, Russia
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
5Ioffe Institute, St. Petersburg, Russia
Email: egorov@spbau.ru
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The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about ~90 meV. Keywords: Superlattices, molecular beam epitaxy, gallium arsenide, dilute nitride, GaAsN, InAs.
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