Application of RIE-technology to control responsivity of 4H-SiC photodiodes
Afanasev A. V.1, Zabrodskiy V. V. 2, Ilyin V. A.1, Luchinin V. V. 1, Nikolaev A. V. 2, Serkov A. V. 1, Trushlyakova V. V. 1, Chigirev D. A. 1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: a_afanasjev@mail.ru

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The possibility to increase the responsivity of 4H-SiC p+-n-n+-photodiodes by varying the thickness of the p+-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics. Keywords: 4H-SiC, p+-n-n+-photodiode, UV-range, p+-epilayer, reactive ion etching RIE, responsivity.
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