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Application of RIE-technology to control responsivity of 4H-SiC photodiodes
The possibility to increase the responsivity of 4H-SiC p+-n-n+-photodiodes by varying the thickness of the p+-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics. Keywords: 4H-SiC, p+-n-n+-photodiode, UV-range, p+-epilayer, reactive ion etching RIE, responsivity.
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