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The influence of a single radiation defect cluster forming on the transistor structure channel conductivity
Zabavichev I. Yu.1,2, Puzanov A.S.
1,2, Obolenskiy S.V.
1,2
1Lobachevsky State University, Nizhny Novgorod, Russia
2Sedakov Scientific Research Institute of Measurement Systems, Nizhny Novgorod, Russia
2Sedakov Scientific Research Institute of Measurement Systems, Nizhny Novgorod, Russia
Email: zabavichev.rf@gmail.com, aspuzanov@inbox.ru, obolensk@rf.unn.ru
The effect of a single radiation defects cluster formation on the characteristics of short-channel structures was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a failure and modern silicon transistors failure with various channel sizes. Keywords: short channel transistor, radiation defect cluster, single event.
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