Optimization of the buffer dielectric layer for the creation of low-defect epitaxial films of the topological insulator Pb1-xSnxTe with x≥0.4
Kaveev A.K.1, Tereshchenko O. E.2
1Ioffe Institute, St. Petersburg, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: kaveev@mail.ioffe.ru

We have optimized the growth conditions of the buffer layer for further deposition of Pb1-xSnxTe (x≥0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF2, BaF2, and Pb0.7Sn0.3Te : In layers was formed and optimized on the Si(111) surface. The surface morphology of this structure was studied depending on the temperature growth regimes and the optimal combination of growth parameters was selected from the point of view of smoothness and crystalline quality. Keywords: crystalline topological insulator, molecular beam epitaxy, reflection high-energy electron doffraction, atomic force microscopy, Pb0.7Sn0.3Te : In.
  1. T.H. Hsieh, H. Lin, J. Liu, W. Duan, A. Bansil, L. Fu. Nature Commun., 3, 982 (2012)
  2. A.N. Akimov, A.V. Belenchuk, A.E. Klimov, M.M. Kachanova, I.G. Neizvestny, S.P. Suprun, O.M. Shapoval, V.N. Sherstyakova, V.N. Shumsky. Techn. Phys. Lett., 35, 524 (2009)
  3. C.A. Lucas, D. Loretto, G.C.L. Wong. Phys. Rev. B, 50, 14340 (1994)
  4. Y.Y. Illarionov, A.G. Banshchikov, D.K. Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stoger-Pollach, A. Steiger-Thirsfeld, M.I. Vexler, M. Waltl, N.S. Sokolov, T. Mueller, T. Grasser. Nature Electronics, 2, 230 (2019)
  5. A.K. Kaveev, D.N. Bondarenko, O.E. Tereshchenko. FTP, 55 (8), 625 (2021) (in Russian)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.


Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru