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Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures
Malevskaya A. V.
1, Il’inskaya N. D.
1, Kalyuzhnyy N. A.
1, Malevskiy D. A.
1, Zadiranov Y. M.
1, Pokrovskiy P. V.
1, Blokhin A. A.
1, Andreeva A. V.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, Natalya.Ilynskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, dmalevsky@scell.ioffe.ru, zadiranov@mail.ioffe.ru, P.Pokrovskiy@mail.ioffe.ru, bloalex91@yandex.ru
Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2-1.5 μm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved. Keywords: light-emitting diode, texturing, etching methods, electroluminescence.
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