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InGaAsP/InP photovoltaic converters for narrowband radiation
Potapovich N.S.
1, Nakhimovich M.V.1, Khvostikov V.P.
1
1Ioffe Institute, St. Petersburg, Russia
Email: nspotapovich@mail.ioffe.ru, vlkhv@scell.ioffe.ru
Utilizing performed research, photoelectric converters of narrow-band radiation (λ~1.0-1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p-n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined. Keywords: photovoltaic converters, narrowband radiation, InGaAsP, InP, LPE, heterostructures.
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