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Synchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface
Benemanskaya G. V.1, Timoshnev S. N.2, Iluridze G. N.3, Minashvili T. A.3
1Ioffe Institute, St. Petersburg, Russia
2 Alferov University, St. Petersburg, Russia
3Georgian Technical University, Tbilisi, Georgia
2 Alferov University, St. Petersburg, Russia
3Georgian Technical University, Tbilisi, Georgia
Email: timoshnev@mail.ru
The electronic structure of the clean AlN surface and the ultrathin K/AlN interface has been studied in situ by synchrotron-based photoelectron spectroscopy using the photon energies in the range of 100-650 eV. The effect of K adsorption was studied. Changes in the valence band and in the Al 2p, N 1s, and K 3p core levels spectra have been investigated using K submonolayer deposition. Modification of the surface electronic structure of the AlN caused by K adsorption is found to originate from the local interaction of N surface atoms and K adatoms. As a results the suppression of intrinsic surface state and appearance of a new induced state are observed. It was found the K-induced electron redistribution effect that causes the positive energy shift of N 1s surface peak and increasing N-ionicity. Keywords: III-nitrides, electronic structure, surface states, metal-III-nitride interfaces, photoelectron spectroscopy.
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Дата начала обработки статистических данных - 27 января 2016 г.
