Phase transformations in composite films of the system Se-Cu, obtained using explosive crystallization and thermal annealing
Kogai V. Ya. 1, Mogileva T. N.1, Fateev A. E. 1, Mikheev G. M.1
1Udmurt Federal Research Center, Ural Branch Russian Academy of Sciences, Izhevsk, Russia
Email: vkogai@udman.ru, mogileva@udman.ru, a.e.fateev@mail.ru, mikheev@udman.ru

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The results of experimental studies of the phase transformation in composite films of the Se-Cu system obtained in vacuum as a result of the sequential thermal deposition of selenium and copper on a glass substrate are presented. At a fixed thickness of the selenium layer (45 nm), the effect of the thickness of the copper layer (40-115 nm) on the phase composition of the synthesized films formed as a result of explosive crystallization occurring during the interaction of hot copper clusters with low-melting selenium was studied. It was found that the subsequent thermal annealing of the synthesized films is accompanied by a significant change in their phase composition and optical transmission spectra. Keywords: phase transformations, composite films of the Se-Cu system, explosive crystallization, thermal annealing, optical properties.
  1. S.R. Gosavi, N.G. Deshpande, Y.G. Gudage, R. Sharma. J. Alloys Compd., 448, 344 (2008)
  2. R. Yu, T. Ren, K. Sun, Z. Feng, G. Li, C. Li. J. Phys. Chem. C, 113, 10833 (2009)
  3. Y. Zhang, C. Hu, C. Zheng, Y. Xi, B. Wan. J. Phys. Chem. C, 114, 14849 (2010)
  4. Y. Zhang, Z.P. Qiao, X.M. Chen. J. Mater. Chem., 12, 2747 (2002)
  5. V. Milman. Acta Crystallogr. Sect. B, B58, 437 (2002)
  6. E.A. Fedorova, L.N. Maskayeva, V.F. Markov, V.I. Voronin, V.G. Bamburov. Inorg. Mater., 55, 106 (2019)
  7. A.A. Ivanov, A.I. Sorokin, V.P. Panchenko, I.V. Tarasova, N.Yu. Tabachkova, V.T. Bublik, R.Kh. Akchurin. Semiconductors, 51, 866 (2017)
  8. Z. Zainal, S. Nagalingam, T.C. Loo. Mater. Lett., 59, 1391 (2005)
  9. T. Liu, Y. Hu, W.B. Chang. Mater. Sci. Eng. B, 180, 33 (2014)
  10. F. Lin, G.Q. Bian, Z.X. Lei, Z.J. Lu, J. Dai. Solid State Sci., 11, 972 (2009)
  11. Y.H. Lv, J.K. Chen, M. Dobeli, Y.L. Li, X. Shi, L.D. Chen. J. Inorg. Mater., 30, 1115 (2015)
  12. V.S. Gurin, A.A. Alexeenko, S.A. Zolotovskaya, K.V. Yumashev. Mater. Sci. Eng. C, 26, 952 (2006)
  13. L.N. Maskayeva, E.A. Fedorova, V.F. Markov, M.V. Kuznetsov, O.A. Lipina, A.V. Pozdin. Semiconductors, 52, 1334 (2018)
  14. V.Ya. Kogay, A.V. Vakhrushev, A.Yu. Fedotov. JETP Lett., 95, 454 (2012)
  15. V.Ya. Kogay, G.M. Mikheev. Tech. Phys. Lett., 46, 439 (2020)
  16. G.M. Mikheev, V.Ya. Kogai, R.G. Zonov, K.G. Mikheev, T.N. Mogileva, Y.P. Svirko. JETP Lett., 109, 11, 704 (2019)
  17. G.M. Mikheev, V.Y. Kogai, T.N. Mogileva, K.G. Mikheev, A.S. Saushin, Y.P. Svirko. Appl. Phys. Lett., 115, 061101 (2019)
  18. G.M. Mikheev, V.Y. Kogai, K.G. Mikheev, T.N. Mogileva, A.S. Saushin, Y.P. Svirko. Mater. Today Commun., 21, 100656 (2019)
  19. G.M. Mikheev, V.Y. Kogai, K.G. Mikheev, T.N. Mogileva, A.S. Saushin, Y.P. Svirko. Opt. Express, 29, 2112 (2021)
  20. G.M. Mikheev, A.E. Fateev, V.Y. Kogai, T.N. Mogileva, V.V. Vanyukov, Y.P. Svirko. Appl. Phys. Lett., 118, 201105 (2021)
  21. P.P. Hankare, A.S. Khomane, P.A. Chate, K.C. Rathod, K.M. Garadkar. J. Alloys Compd., 469, 478 (2009)
  22. V.M. Garcia, P.K. Nair, M.T.S. Nair. J. Cryst. Growth, 203, 113 (1999)
  23. O. Arellano-Tanori, M.C. Acosta-Enri quez, R. Ochoa-Landi n, R. Iniguez-Palomares, T. Mendi vil-Reynoso, M. Flores-Acosta, S.J. Castillo. Chalcogenide Lett., 11, 13 (2014)
  24. A. Jagminas, R. Juvskenas, I. Gailiute, G. Statkute, R. Tomavsiunas. J. Cryst. Growth, 294, 343 (2006)
  25. D. Patidar, N.S. Saxena. J. Cryst. Growth, 343, 68 (2012)
  26. A.B. Lebed', S.S. Naboychenko, V.A. Shunin. Proizvodstvo selena i tellura na OAO "Uraljelektrome" (Yekaterinburg, Izd-vo Ural. un-ta, 2015) (in Russian)
  27. A.V. Lyubchenko. Fizicheskiye osnovy poluprovodnikovoy infrakrasnoy fotoelektroniki (Kiev, Nauk. dumka, 1984) (in Russian)
  28. A. El-Denglawey, M.M. Makhlouf, M. Dongol. Results Phys., 10, 714 (2018)
  29. V.Ya. Kogay. Tech. Phys. Lett., 44, 1002 (2018)
  30. E.V. Aleksandrovich, E.V. Stepanova, A.V. Vakhrushev, A.N. Aleksandrovich, D.L. Bulatov. ZhTF, 83, 50 (2013) (in Russian).
  31. V.Ya. Kogay. Tech. Phys. Lett., 40, 636 (2014)
  32. E.V. Aleksandrovich, A.N. Aleksandrovich, G.M. Mikheev. J. Non-Cryst. Sol., 545, 120249 (2020)
  33. M. Lakshmi, K. Bindu, S. Bini, K.P. Vijayakumar, C.S. Kartha, T. Abe, Y. Kashiwaba. Thin Sol. Films, 386, 127 (2001)
  34. B. Pejova, I. Grozdanov. J. Solid State Chem., 158, 49 (2001)
  35. I.G. Shitu, J.Y.C. Liew, Z.A. Talib, H. Baqiah, M.M.A.K. Kechik, M.A.K. Kamarudin, N.H. Osman, Y.J. Low, I.I. Lakin. ACS Omega, 6, 10698 (2021)
  36. B. Maack, N. Nilius. Corros. Sci., 159, 108112 (2019)
  37. H. Ahn, Y. Um. J. Korean Phys. Soc., 64, 1600 (2014).

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