Bessolov V. N.1, Ivanov A. Yu.2, Kompan M. E.1, Konenkova E. V. 1, Solomnikova A. V.3, Sharofidinov Sh. Sh.1
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: lena@triat.ioffe.ru
Structural and spectroscopic diagnostic methods were used to study AlGaN layers grown by the method of hydride vapour-phase epitaxy on a Si(100) substrate with a V-shaped nanostructure on the surface (NP-Si(100) substrate) and an AlN buffer layer deposited by the reactive magnetron sputtering method. X-ray diffraction analysis showed that the use of a low-temperature AlN buffer layer provides a tendency for AlN blocks to crystallize with a non-polar (10=10) orientation. The NP-Si(100) substrate, with a thickness of 10 μm, forms a block configuration of the AlxGa1-xN layer associated with semi-polar orientations (10=13) and (10=15) with x=0.42 and x=0.39, respectively. The layer diffraction pattern shows the presence of blocks with a polar hexagonal AlxGa1-xN with x=0.36, and cubic c-AlN(220) and c-AlN(420) crystallographic orientations. The atomic force microscopy showed that the 150 μm thick AlGaN layer has block sizes of 9 μm and a semi-polar crystal orientation. The layer diffraction pattern shows the presence of blocks with a polar hexagonal AlxGa1-xN with x=0.36, and cubic c-AlN(220) and c-AlN(420) crystallographic orientations. The AFM showed that the 150 μm thick AlGaN layer has block sizes of 9 μm and a semipolar crystal orientation. Keywords: semipolar AlGaN, nano-structured silicon substrate Si(100), hydride vapour-phase epitaxy.
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