Zikrillaev N. F.1, Saidov S. O.2, Sharibaev N. Yu.3, Mavlonov G. Kh.1, Abduganiev I. A.1, Nazarov E. S.2, Kosimov I. O.4, Ergashov A. K.3
1Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
2Bukhara State University, 200118 Bukhara, Uzbekistan
3Namangan State Institute of Engineering and Technology, 160103 Namangan, Uzbekistan
4A. Sadykov Institute of Bioorganic Chemistry, 100125 Tashkent, Uzbekistan
Email: zikrillaev.nf@gmail.com, safo.saidov.64@mail.ru
The formation of structural, phase and electrophysical properties of KDB-3 silicon after high-temperature manganese diffusion at 1100 oC in a sealed ampoule is investigated. X-ray phase analysis shows the formation of a surface two-phase layer containing intermetallic Mn5Si3 and borosilicide B6Si, with a high fraction of amorphous component. Scanning electron microscopy reveals a pronounced multi-scale relief comprising macro-, micro- and nanostructured elements that reflect heterogeneous material redistribution during diffusion. Electrophysical measurements demonstrate a significant increase in resistivity, reduction of carrier mobility and decrease in carrier concentration, which are attributed to the combined effect of the amorphous matrix and distributed silicide inclusions. The results establish clear links between phase composition, morphology and charge transport in Si:Mn and clarify mechanisms governing the functional properties of modified KDB-3 silicon. Keywords: KDB-3 silicon, manganese diffusion, phase composition, Mn5Si3, B6Si, surface morphology, X-ray phase analysis, electrophysical properties.
- M.K. Bakhadyrkhanov, Kh.M. Iliev, M.O. Tursunov, S.B. Isamov, S.V. Koveshnikov, M.K. Madjitov. Inorg. Mater., 57, 655 (2021). DOI: 10.1134/S0020168521070027
- N.F. Zikrillayev, M.M. Shoabdurahimova, T. Kamilov, A.Z. Khusanov, K.K. Kurbonaliev, N. Norkulov, E.B. Saitov. Phys. Sci. Technol., 9, 89 (2022). DOI: 10.1109/PST55267.2022.00020
- H. Li, D. Niu, Z. Zhang, F. Yang, H. Wang, W. Cheng. Materials, 16, 3540 (2023). DOI: 10.3390/ma16103540
- I. Kounta, H. Reichlova, D. Kriegner, X. Marti, T. Jungwirth, J. Kunevs. Phys. Rev. Mater., 7, 024416 (2023). DOI: 10.1103/PhysRevMaterials.7.024416
- D.I. Rogilo, S.V. Sitnikov, E.E. Rodyakina, and A.A. Shklyaev. Kristallografiya, 66 (528), 2021 (2021). (in Russian). DOI: 10.31857/S0023476121060101
- J. Rial, A. Bhowmik, I. Kezsmarki, D. Kriegner, H. Reichlova, X. Marti. Phys. Rev. B, 110, L220411 (2024). DOI: 10.1103/PhysRevB.10.L220411
- Kh.F. Zikrillaev, K.S. Alopov, G.Kh. Mavlonov, and F.Kh. Karimov. FTP, 56, 528 (2022). (in Russian). DOI: 10.21883/FTP.2022.06.52664.9760
- W. Kern. J. Electrochem. Soc., 137 (6), 1887 (1990). DOI: 10.1149/1.2086825
- M. Hortamani, V.G. Ruiz, A. Qadeer, P. Kratzer, M. Scheffler. Phys. Rev. B, 74, 205305 (2006). DOI: 10.1103/PhysRevB.74.205305
- N.S. Chauhan, S.G. Sara, A. Bhattacharya, T. Mori, Y. Miyazaki. Adv. Funct. Mater., 34, 2313948 (2024). DOI: 10.1002/adfm.202313948
- S.-H. Kim, J.-H. Park, J.-K. Lee. Appl. Surf. Sci., 622, 156821 (2023). https://doi.org/10.1016/j.apsusc.2023.156821
- H. Reichlova, R.L. Seeger, R. Gonzalez-Hernandez, I. Kounta, R. Schlitz, D. Kriegner, P. Ritzinger, M. Lammel, M. Leiviska, A.B. Hellenes, K. Olejni k, V. Petvri cek, P. Dolevzal, L. Horak, E. Schmoranzerova, A. Badura, S. Bertaina, A. Thomas, V. Baltz, L. Michez, J. Sinova, S.T.B. Goennenwein, T. Jungwirth, L. vSmejkal. Nature Commun., 15, 4961 (2024). https://doi.org/10.1038/s41467-024-48493-w
- D. Senk, G. Borchardt. Microchim. Acta, 80, 477 (1983). https://doi.org/10.1007/BF01200866
- R. Ume, H. Gong, V. Tokranov, M. Yakimov, K. Brew, G. Cohen, C. Lavoie, S. Schujman, J. Liu, A.I. Frenkel, K. Beckmann, N. Cady, S. Oktyabrsky. J. Appl. Phys., 132 (3), 035103 (2022). DOI: 10.1063/5.0096022
- M. Idrees, M.W. Khurami, B. Amin, Y. Chen, X. Yan. Mater. Sci. Semicond. Process., 163, 107593 (2023). DOI: 10.1016/j.mssp.2023.107593
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