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Photoinduced band-gap renormalization in degenerate narrow-gap n-InGaN epitaxial films
Russian version
Kudryavtsev K. E.1, Andreev B. A.1, Lobanov D. N. 1, Kalinnikov M. A.1, Novikov A. V. 1, Krasilnik Z. F. 1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: konstantin@ipmras.ru
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Based on the analysis of low-temperature stimulated emission spectra, conclusions are drawn about the band gap narrowing effect (Δ EBGN) in degenerate, n~1019 cm-3, epitaxial InGaN films with an indium content of 60 % under intense photoexcitation. A red shift of the generation line is demonstrated due to the large Δ EBGN exceeding 2 meV/1017cm-3, apparently provided by the Coulomb interaction of degenerate (equilibrium) electrons and nonequilibrium holes localized in the local extrema of the fluctuating band potential, with limited contribution from exchange (Hartree-Fock) interaction. This behavior directly determines the features of the competition between modal gain and losses in bulk In(Ga)N films. The obtained results can also be projected onto promising low-dimensional structures for red-range quantum wells emitters with based on "intermediate composition" InGaN. Keywords: indium gallium nitride, stimulated emission, band-gap renormalization.
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