The technology has been developed for producing bridge-type photodiodes with a small photosensitive area diameter (<100 μm) based on InAs/InAsSbP heterostructures, enabling high reproducibility of device parameters. It has been shown that complete isolation of the metal bridge during etching allows for a halving of the mesa height, thereby ensuring greater mechanical strength of the bridge photodiode. The use of the proposed technology has resulted in a reduction in the device parameter spread across the wafer, as well as a reduction in the photodiode dark current. Thus, at U=-0.2 V, the minimum dark current is I_d=200 μA for an open bridge and I_d=1 μA for devices with full insulation. Suppression of metal-assisted etching enables the fabrication of bridge-type devices on any A^IIIB^V, regardless of the material, etchant, or crystallographic orientation of the structure. Keywords: InAs/InAsSbP heterostructures, chemical etching, bridge photodiode, high-speed response.