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Impurity level of Co in Pb1-x-ySnxCoyTe alloys
Skipetrov E. P.
1, Konstantinov N. S.1, Shevchenko I. V.
1, Bogdanov E. V.
1, Skipetrova L. A.
1, Knotko A .V.
2
1Department of Physics, Lomonosov Moscow State University, Moscow, Russia
2Department of Material Science, Lomonosov Moscow State University, Moscow, Russia
2Department of Material Science, Lomonosov Moscow State University, Moscow, Russia
Email: skip@mig.phys.msu.ru, ns.konstantinov@physics.msu.ru, shevchenkoiv@my.msu.ru, bev@mig.phys.msu.ru, lskip@mig.phys.msu.ru, knotko@inorg.chem.msu.ru
The phase and elemental compositions and galvanomagnetic properties of samples from the Pb1-x-ySnxCoyTe single crystal ingot (x=0.08, y=0.01) were studied. The distributions of tin and cobalt impurities along the length of the ingot were determined, and microscopic inclusions of the second phase enriched in cobalt were found at the end of the ingot. An abnormal increase in the Hall coefficient was found with increasing temperature, and in samples from the middle part of the ingot, an increase in the hole concentration and a linear increase in the Fermi energy at T=4.2 K with increasing tin content were found, indicating pinning of the Fermi level by the resonant Co level located in the valence band. The position of the Co level and the compositional coefficient of its motion relative to the top of the valence band are estimated. A diagram of the rearrangement of the electronic structure of alloys with increasing tin concentration is proposed. Keywords: Pb1-xSnxTe alloys, 3d transition metal impurities, galvanomagnetic properties, resonant level of Co, rearrangement of the electronic structure.
- V.V. Teterkin, F.F. Sizov, L.V. Prokofeva, Y.S. Gromovoi, M.N. Vinogradova. Sov. Phys. Semicond., 17, 489 (1983)
- M. Ratuszek, M.J. Ratuszek. J. Phys. Chem. Solids, 46, 837 (1985)
- V.D. Vulchev, L.D. Borisova. Phys. Status Solidi A, 99, K53 (1987)
- B.A. Akimov, P.V. Verteletski, V.P. Zlomanov, L.I. Ryabova, O.I. Tananaeva, N.A. Shirokova. Sov. Phys. Semicond., 23, 151 (1989)
- L.M. Kashirskaya, L.I. Ryabova, O.I. Tananaeva, N.A. Shirokova. Sov. Phys. Semicond., 24, 848 (1990)
- E. Grodzicka, W. Dobrowolski, T. Story, Z. Wilamowski, B. Witkowska. Cryst. Res. Technol., 31, S651 (1996)
- B.A. Volkov, L.I. Ryabova, D.R. Khokhlov. Phys. Usp., 45, 819 (2002)
- Lead Chalcogenides: Physics and Applications, Optoelectronic Properties of Semiconductors and Superlattices, ed. by D.R. Khokhlov (N. Y.--London, Taylor and Francis, 2003) v. 183
- A.A. Vinokurov, S.G. Dorofeev, O.I. Tananaeva, A.I. Artamkin, T.A. Kuznetsova, V.P. Zlomanov. Inorg. Mater., 42, 1318 (2006)
- E.P. Skipetrov, L.A. Skipetrova, A.V. Knotko, E.I. Slyn'ko, V.E. Slyn'ko. J. Appl. Phys., 115, 133702 (2014)
- J.D. Konig, M.D. Nielsen, Y. Gao, M. Winkler, A. Jacquot, H. Bottner, J.P. Heremans. Phys. Rev. B, 84, 205126 (2011)
- E.P. Skipetrov, A.V. Knotko, E.I. Slynko, V.E. Slynko. Low Temp. Phys., 41, 141 (2015)
- A.A. Vinokurov, A.I. Artamkin, S.G. Dorofeev, T.A. Kuznetsova, V.P. Zlomanov. Inorg. Mater., 44, 576 (2008)
- E.P. Skipetrov, O.V. Kruleveckaya, L.A. Skipetrova, E.I. Slynko, V.E. Slynko. Appl. Phys. Lett., 105, 022101 (2014)
- E.P. Skipetrov, B.B. Kovalev, I.V. Shevchenko, A.V. Knotko, V.E. Slynko. Semiconductors, 54, 1171 (2020)
- E.P. Skipetrov, N.A. Pichugin, E.I. Slyn'ko, V.E. Slyn'ko. Low Temp. Phys., 37, 210 (2011)
- E.P. Skipetrov, A.N. Golovanov, A.V. Knotko, E.I. Slyn'ko, V.E. Slyn'ko. Semiconductors, 46, 741 (2012)
- E.P. Skipetrov, B.B. Kovalev, L.A. Skipetrova, A.V. Knotko, V.E. Slynko. J. Alloys Compd., 775, 769 (2019)
- E.P. Skipetrov, N.S. Konstantinov, E.V. Bogdanov, A.V. Knotko, V.E. Slynko. Low Temp. Phys., 47, 24 (2021)
- J.P. Heremans, V. Jovovich, E.S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, G.J. Snyder. Science, 321, 554 (2008)
- J.P. Heremans, B. Wiendlocha, A.M. Chamoire. Energy Environ. Sci., 5, 5510 (2012)
- B. Wiendlocha. Phys. Rev. B, 97, 205203 (2018)
- T. Parashchuk, B. Wiendlocha, O. Cherniushok, R. Knura, K.T. Wojciechowski. ACS Appl. Mater. Interfaces, 13, 49027 (2021)
- K.A. Kikoin, V.N. Fleurov. Transition Metal Impurities in Semiconductors: Electronic Structure and Physical Properties, World Scientific, Singapore (1994)
- E.P. Skipetrov, O.V. Kruleveckaya, L.A. Skipetrova, A.V. Knotko, E.I. Slynko, V.E. Slynko. J. Appl. Phys., 118, 195701 (2015)
- E.P. Skipetrov, B.B. Kovalev, L.A. Skipetrova, A.V. Knotko, V.E. Slynko. Low Temp. Phys., 45, 201 (2019)
- V.E. Slynko, W. Dobrowolski. Bull. Natl. University "Lviv Polytechnic", Electronica, No. 681, 144 (2010)
- E.I. Slynko, V.M. Vodopyanov, A.P. Bakhtinov, V.I. Ivanov, V.E. Slynko, W. Dobrowolski, V. Domukhowski. Visn. Lviv Polytec. Natl. Univ., Electronica, No. 734, 67 (2012)
- G. Nimtz, B. Schlicht. In: Narrow-Gap Semiconductors, Springer Tracts in Modern Physics (Berlin--Heidelberg--N. Y.--Tokyo, Springer, 1983) v. 98, p. 1
- V.I. Kaidanov, Yu.I. Ravich. Phys. Usp., 28, 31 (1985)
- S. Nemov, M. Auslender, R. Shneck, Z. Dashevsky. In: Advanced Thermoelectric Materials --- Theory, Development, and Applications, ed. by Uday Basheer Al-Naib (IntechOpen, 2025) chapter 4.