Lunin L. S.1, Lunina M. L.1, Donskaya A. V.2
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2Platov State Polytechnic University, Novocherkassk, Rostov oblast, Russia
Email: lunin_ls@mail.ru
The optimal conditions for growing AlGaInSbP/InP(100) heterostructures by liquid-phase gradient epitaxy are revealed: temperature of 823 K, temperature gradient of 20 K/cm, zone thickness of 200 μm and supercooling of 5 K. The composition AlxGayIn1-x-ySbzP1-z was established by mass spectroscopy: x=0.1, y=0.2, z=0.2 mol. fr. Using Raman spectroscopy, the presence of five modes of binary compounds has been proven: InSb, GaSb, InP, AlSb, GaP. The dependence of the structural perfection and photoluminescence on the presence of aluminum atoms (0.1 mol. fr.) in Ga0.2In0.8Sb0.2P0.8/InP heterostructures was studied. The spectral characteristics of the Al0.2In0.8P/Al0.1Ga0.2In0.7Sb0.2P0.8/InP heterostructures showed a high quantum yield of about 95 % in the wavelength range of λ=500-1100 nm. Keywords: growth kinetics, mass-spectroscopy, Raman spectroscopy, photoluminescence, external quantum yield.
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