Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon
Shabunina E. I.1, Shmidt N. M. 1, Chernyakov A. E.2, Talnishnikh N. A.2, Zakgeim A. L.2, Ivanov A. E.2,3, Aleksanyan L. A.4, Polyakov A. Y.4
1Ioffe Institute, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences, St. Petersburg, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
4National University of Science and Technology MISiS, Moscow, Russia
Email: jenni-85@mail.ru
Commercial AlGaN ultraviolet (UV) LEDs with emission wavelength of 270-280 nm and external quantum efficiency (EQE) of 5-7 % were studied. C-V profiling revealed an order of magnitude higher electron concentration in the active region compared to blue LEDs, caused by overdoping with silicon. Analysis of electroluminescence spectra and frequency dependences of the spectral density of low-frequency noise revealed the rearrangement of excited defects in UV LEDs at injection levels an order of magnitude lower than in blue LEDs, as well as the onset of defect generation during aging after 25 hours. Keywords: LEDs, UV range, MQW, AlGaN/GaN, low-frequency noise.
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