Zavarin E. E. 1,2, Rodin S. N.1,2, Kluev B. Yu. 2, Lundin W. V. 1, Nikolaev A. E. 1, Arteev D. S. 1,2, Sakharov A. V. 1,2, Tsatsulnikov A. F. 1,2
1Ioffe Institute, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics Research and Engineering Center of the Russian Academy of Sciences, St. Petersburg, Russia
Email: zavarin@yandex.ru
An analysis based on in situ optical reflectometry of elastic stresses during the growth of AlGaN/SiC HEMT heterostructures by MOVPE is presented. It is shown that changing the growth conditions of the nucleation AlN and buffer GaN layers makes it possible to control the compressive strain. The effect of GaN doping by Fe and C atoms on elastic stresses is compared. Growth conditions of structures with bow of less than 20 microns for substrates up to 3 inches in diameter have been obtained. Keywords: AlGaN, SiC, HEMT, strain, curvature, deflection.
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