Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing
Maslova N. A.1, Danilov D. V.1,2, Vyvenko O. F.1, Skuratov V. A.3,4,5, Volodin V. A. 6,7, Kalyadin A. E.2, Sobolev N. A.2
1St. Petersburg State University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Joint Institute for Nuclear Research, Dubna, Moscow oblast, Russia
4Dubna State University, Dubna, Moscow region, Russia
5National Research Nuclear University “MEPhI”, Moscow, Russia
6Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
7Novosibirsk State University, Novosibirsk, Russia
Email: nadezhda.maslova@spbu.ru, st068118@student.spbu.ru
The depth distribution of point defect complexes in single-crystal silicon irradiated with 167 MeV xenon ions at a dose of 5·1011 cm-2 and annealed in the temperature range of 400-600 oC is Investigated. We show the formation of a large number of vacancy complexes throughout the implantation region, as well as the presence of a potential barrier at the projection implantation depth. Profiling of the luminescent signal across the wafer depth showed an anomalously large depth of the W/W' line corresponding to interstitial complexes, which is explained by the participation of accelerated diffusion mechanisms in the formation of the distribution of this type of defects Keywords: Silicon, ion implantation, cathodoluminescence, electron microscopy.
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