Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method
Myasoedov A. V.1, Mynbaeva M. G.1, Priobrazhensky S. Yu.1,2, Amelchuk D. G.1, Lebedev S. P.1, Lebedev A. A.1
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg Electrotechnical University ”LETI“, St. Petersburg, Russia
Email: amyasoedov@gmail.com
The paper presents the results of a study of thick layers of cubic silicon carbide polytype grown using 6H-SiC/3C-SiC(001) composite substrates of our own manufacture. The layers were grown by the sublimation method in a vacuum chamber in the temperature range of 1600-1800 oC. The study was carried out using optical and transmission electron microscopy and was aimed to characterize the stability of growing a layer of cubic silicon carbide with the orientation (001). An analysis of the defect structure of the layer is presented in comparison with a layer of silicon carbide with the orientation (111), obtained on a wafer of a hexagonal polytype. Keywords: silicon carbide, cubic polytype, sublimation epitaxy.
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