Lapushkin M.N.1
1Ioffe Institute, St. Petersburg, Russia
Email: lapushkin@ms.ioffe.ru
The calculation for the adsorption of potassium atoms on the Al0.5Ga0.5N(0001) surface was performed using the density functional method. The 2D layer of Al0.5Ga0.5N was modeled by the Al0.5Ga0.5N(0001) 2x2x2 supercell containing 10 bilayers of Al0.5Ga0.5N. On the relaxed Al0.5Ga0.5N(0001) surface, the Ga atoms are located above the Al atoms. It is shown that the adsorption of K atoms at a coverage of 0.25 monolayers is preferable in the bridge position either between the surface Ga atoms or between the surface N atoms. The adsorption of potassium atoms forms a surface states band, the electron density of which is localized near the Fermi level. Keywords: AlGaN, potassium, adsorption, electron structure.
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