Control of charge carrier density in photo-FET structures based on atomically thin CVD-MoS2
Eliseyev I. A. 1, Kurtash V. A. 2, Pezoldt J.2, Davydov V. Yu. 1
1Ioffe Institute, St. Petersburg, Russia
2FG Nanotechnologie, Institut f ¨ur Mikro- und Nanelektronik and Institut f ¨ur Mikro- und Nanotechnologien MacroNano, TU Ilmenau, Ilmenau, Germany
Email: ilya.eliseyev@mail.ioffe.ru
Optimization of two-dimensional semiconductor properties for various electronic applications is one of the critical tasks facing the modern nanoelectronics. In this paper, the features of controlling the concentration of charge carriers in monolayer and bilayer MoS2 by changing the gate voltage of the transistor are investigated. The influence of MoS2 inclusions of two-layer thickness with regular (3R) and irregular stacking on the degree of nonlinearity of the current-voltage characteristics and the response of the MoS2 parameters to the gate voltage is investigated. Keywords: molybdenum disulfide, phototransistor, hysteresis, Raman spectroscopy, photoluminescence, charge carriers.
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