Identification of conditions for the formation of deep states of mismatch dislocations and DX centers in heteroepitaxial lightly doped AlxGa1-xAs1-ySby/GaAs-layers
Sobolev M. M.1, Soldatenkov F. Yu.1
1Ioffe Institute, St. Petersburg, Russia
Email: m.sobolev@mail.ioffe.ru

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High-voltage gradual p0-i-n0-junctions of AlxGa1-xAs and AlxGa1-xAs1-ySby with a maximum content of x from 0.15 to 0.6 and y to 0.02, obtained by liquid-phase epitaxy due to autodoping with background impurities, have been studied using methods of capacitance-voltage characteristics and deep-level transient spectroscopy. It was found that the effective recombination trap in the heteroepitaxial layers of AlxGa1-xAs/GaAs and AlxGa1-xAs1-ySby/GaAs with x more than 0.23, regardless of the antimony content, is the DX center of background donor impurities Si, Se, or Te, while these heterostructures lacked deep levels associated with dislocations. In the AlxGa1-xAs1-ySby/GaAs heterostructures with x~0.15-0.19 and y~0.02 and GaAs1-ySby/GaAs with y~0.02, the deep HD3 level associated with mismatch dislocations is an effective recombination trap. Keywords: AlGaAsSb, p0-i-n0-junction, capacitance spectroscopy, DLTS, DX center, mismatch dislocations, liquid-phase epitaxy.
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