Influence of high-intensity titanium ion beam energy density on dopant accumulation and diffusion in silicon
Ivanova A.I.1, Korneva O.S.1, Bozhko I.A.1, Dektyarev S.V.1, Gurulev A.V1
1Tomsk Polytechnic University, Tomsk, Russia
Email: bai@tpu.ru
Ion-doped layers with a thickness up to 2.6 μm were formed using the method of synergy of high-intensity implantation and simultaneous energy impact of a titanium ion beam with a current density of 1.6 A/cm2 on the silicon surface. The article presents the results of the regularities of titanium accumulation in silicon from the duration and frequency of pulses, when a power density of the ion beam is fixed 9.6·104 W/cm2. The Auger electron spectroscopy method was used to obtain dopant distributions over the modified layer depth. X-ray phase analysis demonstrated the presence of titanium disilicide TiSi2 and titanium silicide TiSi phases. Keywords: synergy of high-intensity implantation and energy impact, power density, diffusion, titanium, silicon.
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