Dependence of InGaN/GaN LED emission spectrum parameters on the value of injection current
Igo A. V.1, Vostretsova L.N1, Ribenek V.A.1
1Ulyanovsk State University, Ulyanovsk, Russia
Email: igoalexander@mail.ru
The emission spectra of InGaN/GaN LEDs with quantum wells for injection currents from 1 μA to 55 mA have been measured. The dependence of the parameters of the radiation spectrum on the magnitude of the current is analyzed using a model when the process of electron injection into the quantum well region was considered as a nonequilibrium stationary process. Modeling has determined that a decrease in the quantum yield at high currents is associated with a decrease in the lifetime of current carriers due to an increase in temperature in the region of the p-n junction due to Joule heat. The temperature in the region of the p-n junction was estimated from the width of the radiation spectrum, by modeling the volt-ampere characteristics, from the high-energy slope of the radiation spectrum, and by measuring the luminescence spectra of Cr3+ ions on a sapphire substrate. At an ambient temperature of 23 oC with a current of 55 mA, the temperature in the region of the quantum well is estimated to be 97 oC, in the region of the p-n junction 60 oC, and the sapphire substrate 45 oC. Modeling has shown that by measuring the dependence of the shift of the maximum of the radiation spectrum on the magnitude of the current, it is possible to determine the most important parameters of the InGaN/GaN structure with quantum wells. Keywords: InGaN/GaN, quantum well structures, radiation efficiency, spectrum modeling.
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