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Optimization of carrier-depletion silicon optical phase shifter
Russian version
Lavrukhina E.A. 1, Pashin D. S. 1, Nezhdanov А. V. 1, Sidorenko K. V. 1, Volkov P. V. 2, Bobrov A. I. 1
1Physical and Technical Research Institute, National Research State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
2Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: ekaterina.a.lavrukhina@gmail.com, pashindmi@gmail.com, nezhdanov@phys.unn.ru, sidorenko@nifti.unn.ru, volkov@ipmras.ru, bobrov@phys.unn.ru
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The optimization of the cross-sectional geometry and doping concentrations of the p-n junction in an electro-optic phase shifter, based on the depletion of free carriers in a silicon waveguide, has been performed using the gradient descent method. The configuration obtained through numerical simulation achieves a balance between phase shift efficiency and propagation loss. Additionally, a range of geometrical parameters ensuring single-mode operation in highly doped rib waveguides has been identified. The proposed optimization methodology and resulting findings offer valuable insights for the design of integrated photonic devices. Keywords: silicon photonics, electro-optic phase shifters, silicon-on-insulator, free carrier plasma dispersion effect, single-mode rib optical waveguide.
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