Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Metamorphic InGaAs photodiode with wavelength 1.55 μm, grown on GaAs substrate
Samartsev I. V.
1, Baidus N. V.
1, Zubkov S. Yu.
1, Balyasnikov D. M. 1, Zhidyaev K. S.
1, Zdoroveishchev A. V. 1, Bobrov A. I.1, Sidorenko K. V.
1, Nezhdanov A. V.1, Klementev D. S. 2
1Lobachevsky State University, Nizhny Novgorod, Russia
2Scientific Research Institute Measuring Systems named J.E. Sedakov, Nizhny Novgorod, Russia
2Scientific Research Institute Measuring Systems named J.E. Sedakov, Nizhny Novgorod, Russia
Email: samartsev@nifti.unn.ru, bnv@nifti.unn.ru, zubkov@phys.unn.ru, kuznechiha4@gmail.com, zhidyaev@nifti.unn.ru, zdorovei@gmail.com, bobrov@phys.unn.ru, sidorenko@nifti.unn.ru, nezhdanov@phys.unn.ru, dimonklemen@gmail.com
The article presents the results of investigation of photodiodes for 1.55 μm wavelength, grown on GaAs substrates. InGaAs photodiode structures with InAlGaAs metamorphic buffer layer with quasi-root change of In concentration were grown by Metal Organic Chemical Vapor Deposition (MOCVD) has been developed. Photodiodes created based on the obtained structures had photosensitivity region up to 1.68 μm. The dark current density at reverse bias of -2 V was 3·10-3 A/cm2. The photosensitivity at wavelength of 1.55 μm was 0.6 A/W. Keywords: MOCVD, nanomaterials, AIIIBV semiconductors, infrared photodiodes, dark current.
- N.J. Quitoriano, E.A. Fitzgerald. J. Appl. Phys., 102, 033511 (2007)
- H.G. Nguyen, H.W. Yu, Q.H. Luc, Y.Z. Tang, V.T.H. Phan, C.H. Hsu, E.Y. Chang, Y.C. Tseng. Nanotechnology, 25, 48520 (2014)
- I.V. Samartsev, S.M. Nekorkin, B.N. Zvonkov, V.Ya. Aleshkin, A.A. Dubinov, I.J. Pashenkin, N.V. Dikareva, A.B. Chigineva. Semiconductors, 52 (12), 1564 (2018)
- Yang He, Yurun Sun, Yan Song, Yongming Zhao, Shuzhen Yu, Jianrong Dong. Jpn. J. Appl. Phys., 55, 065501 (2016)
- I.V. Samartsev, B.N. Zvonkov, N.V. Baidus, A.B. Chigineva, K.S. Zhidyaev, N.V. Dikareva, A.V. Zdoroveyshchev, A.V. Rykov, S.M. Plankina, A.V. Nezhdanov, A.V. Ershov. Semiconductors, 57 (6), 488 (2023)
- J. Tersoff. Appl. Phys. Lett., 62, 693 (1993)
- A. Bosacchi, A.C. De Riccardis, P. Frigeri, S. Franchi, C. Ferrari, S. Gennari, L. Lazzarini, L. Nasi, G. Salviati, A.V. Drigo, F. Romanato. J. Cryst. Growth, 175 (176), 1009 (1997)
- L. Lazzarini, C. Ferrari, S. Gennari, A. Bosacchi, S. Franchi, M. Berti, A.V. Drigo, F. Romanato, G. Salviati. Microsc. Semicond. Mater. Conf. (Oxford, April 7-10, 1997). [Inst. Phys. Conf. Ser. N 157]
- R.Kh. Akchurin, A.A. Marmalyuk. MOS-gidridnaya epitaksiya v tekhnologii materialov fotoniki i elektroniki (M., Tekhsfera, 2018). (in Russian)
- R. Kumar, A. Bag, P. Mukhopadhyay, S. Das, D. Biswas. Electron. Mater. Lett., 12, 356 (2016)
- J. Zhang, J. Verbist, B. Moeneclaey, J. Van Weerdenburg, R. Van Uden, H. Chen, J. Van Campenhout, C. Okonkwo, X. Yin, J. Bauwelinck, G. Roelkens. IEEE Photonics J., 8 (1), 1 (2016)
- https://azimp.ru/
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.