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The influence of the procedure of iron doping of CVD-ZnSe using high-temperature diffusion on the composition and spatial distribution of impurity-defect centers
Kalinushkin V. P.
1, Uvarov O. V.
1, Gladilin A. A.
1, Mironov S. A.
1, Poplavskiy M. V. 1, Pupyrev P. D. 2, Gavrischuk E. M.
3, Savin D. V.
3, Timofeeva N. A.
3
1Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: sa.mironov@kapella.gpi.ru
The spatial distribution of impurity-defect centers in CVD-ZnSe crystals formed after the procedure of doping these crystals with iron using high-temperature doping is investi- gated.The experiments were carried out using the method of two- photon confocal microscopy, which allows recording luminescence in the range of 0.44-0.73 μm with a spatial resolution of several μm. It is shown that as a result of this procedure, the crystal becomes significantly inhomogeneous not only in the doping zone. Regions hundreds of microns in size are formed in it adjacent to all its surfaces with a composition of intrinsic point defects and their complexes different from the main volume. It is found that the sizes of these regions depend on the doping time. Assumptions are made about the nature of complexes of intrinsic defects with residual impurities formed during doping and the mechanism of formation of the above regions. Keywords: ZnSe : Fe; two-photon confocal microscopy, impurity-defect composition, diffusion.
- S. Fusil, P. Lemasson, J.-O. Ndap, A. Riviere, G. Neu, E. Tour\=ni, G. Geoffroy, A. Zozime, R. Triboulet. J. Cryst. Growth, 184--185, 102 (1998)
- S.A. Rodin, V.B. Ikonnikov, D.V. Savin, E.M. Gavrishchuk. Neorg. mater, 53 (11), 1143 (2017). (in Russian)
- V.P. Kalinushkin, O.V. Uvarov. ZhTF, 86 (12), 119 (2016). (in Russian)
- V.P. Kalinushkin, O.V. Uvarov, A.A. Gladilin. J. Electron. Mater., 47, 5087 (2018)
- G. Steinmeyer, J.W. Tomm, P. Fuertjes, U. Griebner, S.S. Balabanov, T. Elsaesser. Phys. Rev. Appl., 19, 054043 (2023)
- D.V. Martyshkin, V.V. Fedorov, M. Mirov, I. Moskalev, S. Vasilyev, S.B. Mirov. CLEO: Science and Innovations 2015 (San Jose, California, US, 2015). https://doi.org/10.1364/CLEO_SI.2015.SF1F.2
- S.D. Velikanov, N.A. Zaretsky, E.A. Zotov, S.Y. Kazantsev, I.G. Kononov, Y.V. Korostelin, A.A. Maneshkin, K.N. Firsov, M.P. Frolov, I.M. Yutkin. Kvant. elektron., 46 (1), 11 (2016). (in Russian)
- K.N. Firsov, E.M. Gavrishchuk, S.Yu. Kazantse, I.G. Kononov, S.A. Rodin. Laser Phys. Lett., 11, 085001 (2014). DOI: 10.1088/1612-2011/11/8/085001
- K. Karki, S. Yu, V. Fedorov, Y. Wu, S. Mirov. In: Laser Congress 2020 (ASSL, LAC), P. Schunemann, C. Saraceno, S. Mirov, S. Taccheo, J. Nilsson, A. Petersen, D. Mordaunt, J. Trbola (eds) [OSA Technical Digest (Optica Publishing Group, 2020) p. AW1A.3]
- V. Kalinushkin, O. Uvarov, S. Mironov, K. Nartov, N. Il'ichev, M. Studenikin, E. Gavrischuk, N. Timofeeva, S. Rodin, A. Gladilin. J. Luminesc., 231, 117795 (2021). https://doi.org/10.1016/j.jlumin.2020.117795
- T.V. Kotereva, V.B. Ikonnikov, E.M. Gavrishchuk, A.M. Potapov, D.V. Savin. ZhTF 7, 1110 (2018). (in Russian)
- D.D. Nedeoglo, A.V. Simashkevich. Electricheskie i luminescentnye svoistva selenids zinka (Kishinev, Shtiyintza, 1984) p. 53. (in Russian)
- Li Huan-Yong, Jie Wan-Qi, Zhang Shi-An, Sun Zhen-Rong, Xu Ke Wei. Chin. Phys. Soc., 15 (10), 2407 (2006)
- A.N. Georgobiani, M.K. Sheynkman. Fizika soyedineniy AIIBVI (M., Nauka, 1986) p. 72. (in Russian)
- G.N. Ivanova, V.A. Kasyan, D.D. Nedeoglo, S.V. Oprya. FTP, 32 (2), 171 (1988). (in Russian)
- N.K. Morozova, E.M. Gavrishchuk, I.A. Karetnikov, O.R. Golovanova, V.S. Zimogorskii, V.G. Galstyan. Zhurn. prikl. spektroskopii 5, 731 (1996). (in Russian)
- I. Avetissov, K. Chang, N. Zhavoronkov, A. Davydov, E. Mozhevitina, A. Khomyakov, S. Kobeleva, S. Neustroev. J. Cryst. Growth, 401, 686 (2014). DOI: 10.1016/j.jcrysgro.2014.01.003
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