Study of the influence of charge carrier traps on the linearity of a CCD photodetector
Sidorov V. V.1,2, Petrov P. V.2
1JSC Radium Institute. V.G. Khlopina, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: pavel.petrov@gmail.com
We study the properties of a silicon CCD photodetector using the lock-in technique. At low illumination intensities, nonlinearity of the photodetector characteristics is detected due to the presence of traps in the charge accumulation zone. A theoretical model is developed that allows one to describe the experimental results and calculate the concentration and energy of the traps. It is demonstrated that using the energy and concentration of the traps as calibration coefficients, it is possible to linearize the results of CCD photodetector measurements. Keywords: CCD photosensor, charge carrier traps, electro-neutrality equation, lock-in technique.
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