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Potential speed of a diamond field-effect transistor on subsurface two-dimensional hole gas
Kukushkin V. A.
1,2, Kukushkin Yu. V.2
1Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
Email: vakuk@ipfran.ru, yuriy.kukushkinn@gmail.com
It is shown that the significant change of hole mobility in a two-dimensional hole gas under H-terminated surface of artificial diamond by the variation of a strong orthogonal electric field detected lately can be used for the creation of a high-speed diamond field-effect transistor. According to calculations made for realistic parameters of such a device the time of more than 50% modulation of source-drain current by gate voltage rapidly decreases with the increase of the hole sheet density in the subsurface conduction channel formed by this gas and for its value 7· 1013 cm-2 achieves 7 ps Keywords: diamond, high-speed field-effect transistor, mobility.
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