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Hybrid stacks of thyristor switch - semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400-1500 nm)
Russian version
Podoskin A.A. 1, Shushkanov I.V.1, Slipchenko S.O. 1, Pikhtin N.A.1, Bagaev T.A.1, Svetogorov V.N.2, Ryaboshtan Yu. L.2, Ladugin M.A.2, Marmalyuk A.A.2, Simakov V.A.2
1Ioffe Institute, St. Petersburg, Russia
2
Email: podoskin@mail.ioffe.ru
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Designs of hybrid laser sources based on thyristor current switches and laser diodes have been developed and investigated. The heterostructures of the thyristor current switches and laser diodes were created using MOCVD technology in the AlInGaAsP/InP solid solution systems. For the developed sources, a peak power of 20 W was demonstrated at a pulse duration of 65 ns and an operating voltage of 15 V. The minimum turn-on delay of the laser generation relative to the start of the control current pulse was 10ns at a pulse amplitude of 280 mA. Keywords: Thyristor, current switch, pulsed semiconductor laser.
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