Development of a method for etching the InAs/InAsSbP photodiode heterostructures
Pivovarova A.A. 1, Il'inskaya N.D. 1, Kunitsyna E.V. 1, Yakovlev Yu.P. 1
1Ioffe Institute, St. Petersburg, Russia
Email: Pivovarova.antonina@iropto.ioffe.ru
A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO4 with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1-1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density j=5.7·10-2 A/cm2 and the typical current density j=15.5·10-2 A/cm2. The maximum value of R0 at room temperature is 1654 Ohm, while the R_0A product reaches 1.17 Ohm·cm2. Keywords: indium arsenide, photodiode, new etchant, reverse dark currents, differential resistance.
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